离子注入Ion implantation

加速离子进入材料，在一定深度范围形成组分分布。Accelerated ions penetrate a solid and form a distributed composition profile.

原理图解准备中Preparing the mechanism study

加速离子进入材料，在一定深度范围形成组分分布。Ion implantation

非等比例原理示意，不代表设备或加工能力。Not-to-scale explanation, not an equipment or capability claim.

关键区别Key distinction

剂量、深度分布与电学激活不是一回事；注入造成的损伤需单独评估。Dose, depth profile and electrical activation are different. Implant damage requires separate assessment.

观察路径What to observe

定义注入窗口Define the implant window

掩模保护部分区域，窗口允许离子进入。A mask shields regions while windows admit ions.

离子进入材料Ions enter the solid

运动标记穿入表面，改变的是内部组分。Ions penetrate the surface and change internal composition.

形成深度分布A depth distribution develops

停留位置有分布，不是一条完全平齐的线。Stopping positions form a distribution rather than one flat plane.

损伤与激活分开Damage and activation differ

注入不等于电学激活，后续热处理需另评估。Implantation is not electrical activation; annealing is assessed separately.

项目输入Project inputs

离子种类、目标分布、掩模、沟道效应与热预算Species, profile, mask, channeling and thermal budget.
整理项目需求Prepare a project brief ↗

进一步阅读Further reading

动画为非等比例原理示意，粒子、颜色、光路及材料厚度为解释性表达，不是测量结果或设备参数。Animation is not to scale. Particles, colors, optical paths and thicknesses are explanatory, not measurement results or tool parameters.