EBL
电子束曝光 / 电子束直写Electron-Beam Lithography
适合纳米线宽、超表面、光栅、小面积高精度图形。先说清最小线宽、线距、面积、胶型、套刻和 SEM 验收。For nanoscale CDs, metasurfaces, gratings and high-precision small-area patterns.
看电子束直写与曝光加工Open EBL topic
PMMA电子束胶显影PMMA resist development
电子束曝光写场拼接误差EBL field stitching errors
电子束曝光剂量测试与剂量矩阵EBL dose testing and dose matrices
电子束曝光充电效应与导电层EBL charging and conductive coatings
EBL / OVERLAY
EBL 套刻对准标记设计EBL Alignment Marks
全局/局部标记、坐标原点、工艺保护和验收口径:已有图形上的二次曝光,先把标记交接清楚。Global/local marks, coordinate conventions, process compatibility and acceptance for aligned exposures.
查看套刻标记与交付检查Open alignment handoff guide
邻近效应校正 PEC 与剂量测试PEC and dose-test handoff
LDW / DUV
激光直写、接触式紫外、Stepper、DUVLDW, Contact UV, Stepper, DUV
适合微米级图形、掩膜版路线、套刻验证和批量样品。重点看版图面积、对准 mark、基底尺寸和是否需要掩膜版。For micron-scale patterns, mask routes, overlay validation and sample batches.
看激光直写与光刻加工Open lithography topic
CONTACT UV
接触式光刻加工Contact UV Lithography
适合微米级图形、金属电极、刻蚀掩膜和微流控图形。先确认掩膜版、胶厚、基底尺寸、对准 mark 和后续工艺。For micron-scale patterns, electrodes, etch masks and microfluidic features.
看接触式光刻加工Open contact UV topic
光刻胶旋涂膜厚与试片验收Photoresist coating thickness and pilot checks
光刻胶边缘去胶 EBRPhotoresist edge bead removal (EBR)
HMDS 光刻胶增粘处理HMDS photoresist adhesion priming
DUV / STEPPER
DUV 光刻与 StepperDUV & Stepper Lithography
适合亚微米到微米级重复图形、多层套刻和晶圆级验证。重点看片径、die map、掩膜版和套刻策略。For sub-micron to micron patterns, overlay and wafer-level validation.
看 DUV/Stepper 光刻Open DUV topic
RIE
RIE 刻蚀 / 反应离子刻蚀Reactive Ion Etching
适合薄膜开孔、介质层转移和浅层各向异性刻蚀。重点看材料堆栈、掩膜选择比、开口尺寸、侧壁和过刻损伤。For thin-film openings, dielectric transfer and shallow anisotropic etching.
看 RIE 刻蚀需求准备Open RIE topic
氧等离子去残胶 DescumOxygen plasma descum
ICP
ICP 刻蚀加工ICP Etching
适合要求较高刻蚀速率、方向性或深宽比的图形转移。重点看材料体系、掩膜选择比、最小开口、侧壁形貌和等离子体损伤。For directional, higher-rate or higher-aspect-ratio pattern transfer with controlled profiles.
看 ICP 刻蚀加工准备Open ICP topic
ICP / RIE / DRIE
刻蚀与图形转移Etch & Pattern Transfer
如果你搜的是硅刻蚀、SiO2 刻蚀、ICP、DRIE、侧壁形貌或选择比,先把材料堆栈、目标深度和掩膜条件整理出来。For silicon, oxide, ICP, DRIE, sidewall and selectivity questions.
看 ICP/RIE/DRIE 刻蚀Open etch topic
DRIE
DRIE 深硅刻蚀Deep Reactive Ion Etching
适合 MEMS 深槽、贯穿孔、硅微通道和高深宽比结构。重点看晶圆规格、刻蚀深度、开口率、掩膜、侧壁和背面保护。For MEMS trenches, through-silicon features, channels and high-aspect-ratio structures.
看 DRIE 深硅刻蚀准备Open DRIE topic
IBE
离子束刻蚀(IBE)Ion Beam Etching
适合金属、磁性材料和难反应刻蚀薄膜。重点看完整材料栈、掩膜、再沉积、温升、终点和 SEM 验收。For metals, magnetic films and materials without a stable reactive-plasma route.
看离子束刻蚀加工准备Open IBE topic
WET ETCH
湿法刻蚀与湿法腐蚀Wet Etching
适合硅各向异性腐蚀、介质层开窗、金属腐蚀和牺牲层释放。重点看材料栈、晶向、掩膜、选择比、侧蚀与正背面保护。For silicon, dielectric, metal and sacrificial-layer etching with controlled selectivity and undercut.
看湿法刻蚀加工准备Open wet-etch topic
PVD / ALD
镀膜、Lift-off、金属电极Films, Lift-off, Electrodes
常见问题是膜厚、附着层、残胶、台阶覆盖和后续测试。先说明金属/介质材料、目标膜厚、温度限制和图形边界。Film material, thickness, adhesion, residue and downstream testing drive this route.
看镀膜加工与薄膜沉积Open thin-film topic
看 ALD 原子层沉积加工Open ALD topic
看高深宽比 ALD 共形覆盖与截面验收ALD conformality in deep features
看 PECVD 薄膜沉积加工Open PECVD topic
看 LPCVD 低压化学气相沉积Open LPCVD topic
看磁控溅射镀膜加工Open sputtering topic
看电子束蒸发镀膜加工Open e-beam evaporation topic
看 Lift-off 金属电极Open lift-off topic
看镀膜工艺页Open film route
IMPLANT
离子注入与掺杂Ion Implantation & Doping
适合硅及半导体材料的局部或整片掺杂。重点看离子种类、能量、剂量、掩膜、目标结深和后续激活退火。For local or blanket semiconductor doping with controlled species, energy, dose, mask, profile and activation.
看离子注入掺杂加工Open ion implantation topic
看硅片热氧化加工Open thermal oxidation topic
看 RTA 快速热退火加工Open RTA topic
看热处理与掺杂工艺页Open doping route
DICING
晶圆切割与划片Wafer Dicing
适合硅片、玻璃、陶瓷和带器件晶圆分割。重点看材料、片厚、die map、划片道、崩边边界和正面保护。For silicon, glass, ceramic and device wafers with controlled streets, chipping and protection.
看晶圆切割与划片准备Open wafer dicing topic
看晶圆减薄与 CMP 抛光Open wafer thinning topic
看切割减薄工艺页Open dicing route
NIL
纳米压印与母版Nanoimprint & Masters
适合周期结构、光栅、微透镜和重复阵列。重点看母版精度、脱模、残胶层、压印面积和后续图形转移。For periodic structures, gratings, microlenses and repeated arrays.
看纳米压印母版准备Open nanoimprint topic
看纳米压印工艺页Open NIL page
META
超表面加工Metasurface Fabrication
适合超透镜、亚波长阵列、偏振器件和光栅。重点看周期、线宽、材料膜厚、刻蚀深度、SEM 和光学验收。For metalenses, subwavelength arrays, polarization optics and gratings.
看超表面加工Open metasurface topic
MEMS
MEMS 加工MEMS Fabrication
适合沟槽、通孔、腔体、薄膜、梁、膜片和传感结构。先确认材料栈、深宽比、释放、封装和测试方式。For trenches, through holes, cavities, films, beams, membranes and sensor structures.
看 MEMS 加工Open MEMS topic
临界点干燥与防粘连Critical point drying and stiction
CHIP
微流控加工Microfluidic Fabrication
适合 PDMS、SU-8 母模、玻璃/硅微通道和键合封装。重点看通道剖面、入口出口、压力和泄漏测试。For PDMS, SU-8 masters, glass/silicon channels and bonded microfluidic chips.
看微流控加工Open microfluidic topic
SU-8
SU-8 厚胶光刻与母模SU-8 Thick-Resist Lithography
适合微流控母模、MEMS 厚胶结构、微柱阵列和高深宽比图形。重点看胶厚、线宽、显影、应力和脱模方式。For microfluidic masters, MEMS thick structures, pillar arrays and high-aspect-ratio features.
看 SU-8 厚胶光刻Open SU-8 topic
GLASS CHIP
玻璃微流控芯片加工与键合Glass Microfluidic Chip Bonding
适合玻璃微通道、硅玻璃键合、打孔封接和耐溶剂芯片。重点看通道深度、接口、键合面和泄漏测试。For glass channels, silicon-glass bonding, ports and solvent-resistant chips.
看玻璃微流控芯片Open glass chip topic
BOND
晶圆键合加工Wafer Bonding
适合 MEMS 空腔、硅玻璃芯片和晶圆级封装。重点看材料组合、表面、颗粒、翘曲、对准、热预算和气密验收。For MEMS cavities, silicon-glass devices and wafer-level packaging.
看晶圆键合加工准备Open wafer bonding topic
ANODIC
阳极键合与硅玻璃封装Anodic Bonding
适合 MEMS 腔体、压力传感器和硅玻璃微流控封装。重点看玻璃体系、表面、对准、温度电压窗口与气密验收。For MEMS cavities, sensors and silicon-glass microfluidic packages.
看阳极键合加工准备Open anodic-bonding topic
SEM / TEM / SIMS
SEM、TEM、ToF-SIMS 与测试验收SEM, TEM, ToF-SIMS & Metrology
很多项目不是做不出来,而是验收说不清。提前定义 SEM 图、截面、轮廓、椭偏、电学或光学测试,后面少扯皮。Clear metrology avoids late-stage ambiguity and unhelpful disputes.
看 SEM 表征验收Open SEM topic
看 FIB 截面制样准备Open FIB topic
看 AFM 粗糙度测试准备Open AFM topic
看椭偏仪膜厚测试准备Open ellipsometry topic
看 XPS 表面成分分析准备Open XPS topic
看 ToF-SIMS 深度剖析准备Open ToF-SIMS topic
看 TEM 制样与测试准备Open TEM topic
看拉曼光谱测试准备Open Raman topic
看台阶仪膜厚测试准备Open profilometer topic
看 XRD 物相与结晶分析准备Open XRD topic
看光致发光 PL 测试准备Open PL topic
看 EDS 能谱元素分析与面扫准备Open EDS mapping topic
看纳米压痕硬度与模量测试准备Open nanoindentation topic
DXF / GDS
DXF 转 GDSDXF to GDS
只有 CAD 图、DXF 或 DWG 时,先确认单位、闭合图形、layer 映射、top cell、最小线宽和截图说明,再谈加工报价。For CAD/DXF/DWG inputs, check units, polygons, layers, top cell, CD and screenshots before quotation.
看 DXF 转 GDSOpen DXF to GDS topic
KLayout
KLayout 版图检查KLayout GDS Check
GDS 能打开不等于能加工。提交前先看 top cell、layer/datatype、单位、最小尺寸、mark、有效面积和材料说明。An openable GDS is not automatically fabrication-ready; check hierarchy, layers, units, CDs, marks and area.
看 KLayout 版图检查Open KLayout check topic
GDS CHECK
GDS 版图检查GDS Layout Check
投递电子束曝光、光刻、刻蚀或掩膜版前,先确认 top cell、layer/datatype、单位、关键尺寸、对准 mark 和有效面积。Before EBL, lithography, etch or masks, check top cell, layers, units, CDs, marks and active area.
看 GDS 版图检查Open GDS layout check
FAQ
微纳加工常见问题Fabrication FAQ
如果你搜的是“微纳加工怎么报价”“电子束曝光需要什么资料”“刻蚀能不能做”,先看常见问题。For quotation, input preparation and feasibility questions, start with the FAQ.
看微纳加工需求判断Open fabrication topic
GLOSSARY
微纳加工工艺词库Process Glossary
EBL、LDW、DUV、RIE、ICP、DRIE、PVD、ALD、Lift-off、NIL、SEM、GDS 这些缩写先看懂。Understand the abbreviations before matching the right route.
打开词库Open glossary
版图、仿真与资料Layout, Simulation and Inputs
KLayout、FDTD、COMSOL、DXF 转 GDS,这些不是小事。KLayout, FDTD, COMSOL and DXF-to-GDS are not side details.
业内沟通最容易卡在版图和仿真到加工的转换:单位、layer、cell、最小线宽、材料 n/k、膜厚、周期、侧壁角和验收指标都可能影响报价。工具箱里整理了版图软件、光学仿真和提交前检查。Layout units, layers, cells, CD, n/k data, film thickness, period, sidewall and acceptance metrics all affect quotation and feasibility.
打开版图工具箱Open layout toolbox
打开仿真学习资料Open simulation resources