电子束曝光 / 电子束直写Electron-Beam Lithography
适合纳米线宽、超表面、光栅、小面积高精度图形。先说清最小线宽、线距、面积、胶型、套刻和 SEM 验收。For nanoscale CDs, metasurfaces, gratings and high-precision small-area patterns.
看电子束直写与曝光加工Open EBL topic行业搜索入口Topic Finder
微纳加工的搜索词很多:电子束曝光、接触式光刻、DUV 光刻、刻蚀、镀膜、Lift-off、超表面加工、MEMS 加工、微流控加工、纳米压印、SEM、KLayout、DXF 转 GDS。真正有用的不是关键词本身,而是把需求翻译成可报价、可加工、可验收的输入。Search terms are only the entry point. The useful work is translating a request into inputs that can be quoted, fabricated and verified.
适合纳米线宽、超表面、光栅、小面积高精度图形。先说清最小线宽、线距、面积、胶型、套刻和 SEM 验收。For nanoscale CDs, metasurfaces, gratings and high-precision small-area patterns.
看电子束直写与曝光加工Open EBL topic适合微米级图形、掩膜版路线、套刻验证和批量样品。重点看版图面积、对准 mark、基底尺寸和是否需要掩膜版。For micron-scale patterns, mask routes, overlay validation and sample batches.
看激光直写与光刻加工Open lithography topic适合微米级图形、金属电极、刻蚀掩膜和微流控图形。先确认掩膜版、胶厚、基底尺寸、对准 mark 和后续工艺。For micron-scale patterns, electrodes, etch masks and microfluidic features.
看接触式光刻加工Open contact UV topic适合亚微米到微米级重复图形、多层套刻和晶圆级验证。重点看片径、die map、掩膜版和套刻策略。For sub-micron to micron patterns, overlay and wafer-level validation.
看 DUV/Stepper 光刻Open DUV topic适合薄膜开孔、介质层转移和浅层各向异性刻蚀。重点看材料堆栈、掩膜选择比、开口尺寸、侧壁和过刻损伤。For thin-film openings, dielectric transfer and shallow anisotropic etching.
看 RIE 刻蚀需求准备Open RIE topic适合要求较高刻蚀速率、方向性或深宽比的图形转移。重点看材料体系、掩膜选择比、最小开口、侧壁形貌和等离子体损伤。For directional, higher-rate or higher-aspect-ratio pattern transfer with controlled profiles.
看 ICP 刻蚀加工准备Open ICP topic如果你搜的是硅刻蚀、SiO2 刻蚀、ICP、DRIE、侧壁形貌或选择比,先把材料堆栈、目标深度和掩膜条件整理出来。For silicon, oxide, ICP, DRIE, sidewall and selectivity questions.
看 ICP/RIE/DRIE 刻蚀Open etch topic适合 MEMS 深槽、贯穿孔、硅微通道和高深宽比结构。重点看晶圆规格、刻蚀深度、开口率、掩膜、侧壁和背面保护。For MEMS trenches, through-silicon features, channels and high-aspect-ratio structures.
看 DRIE 深硅刻蚀准备Open DRIE topic适合金属、磁性材料和难反应刻蚀薄膜。重点看完整材料栈、掩膜、再沉积、温升、终点和 SEM 验收。For metals, magnetic films and materials without a stable reactive-plasma route.
看离子束刻蚀加工准备Open IBE topic适合硅各向异性腐蚀、介质层开窗、金属腐蚀和牺牲层释放。重点看材料栈、晶向、掩膜、选择比、侧蚀与正背面保护。For silicon, dielectric, metal and sacrificial-layer etching with controlled selectivity and undercut.
看湿法刻蚀加工准备Open wet-etch topic常见问题是膜厚、附着层、残胶、台阶覆盖和后续测试。先说明金属/介质材料、目标膜厚、温度限制和图形边界。Film material, thickness, adhesion, residue and downstream testing drive this route.
看镀膜加工与薄膜沉积Open thin-film topic 看 ALD 原子层沉积加工Open ALD topic 看 PECVD 薄膜沉积加工Open PECVD topic 看 LPCVD 低压化学气相沉积Open LPCVD topic 看磁控溅射镀膜加工Open sputtering topic 看电子束蒸发镀膜加工Open e-beam evaporation topic 看 Lift-off 金属电极Open lift-off topic 看镀膜工艺页Open film route适合硅及半导体材料的局部或整片掺杂。重点看离子种类、能量、剂量、掩膜、目标结深和后续激活退火。For local or blanket semiconductor doping with controlled species, energy, dose, mask, profile and activation.
看离子注入掺杂加工Open ion implantation topic 看硅片热氧化加工Open thermal oxidation topic 看 RTA 快速热退火加工Open RTA topic 看热处理与掺杂工艺页Open doping route适合硅片、玻璃、陶瓷和带器件晶圆分割。重点看材料、片厚、die map、划片道、崩边边界和正面保护。For silicon, glass, ceramic and device wafers with controlled streets, chipping and protection.
看晶圆切割与划片准备Open wafer dicing topic 看晶圆减薄与 CMP 抛光Open wafer thinning topic 看切割减薄工艺页Open dicing route适合周期结构、光栅、微透镜和重复阵列。重点看母版精度、脱模、残胶层、压印面积和后续图形转移。For periodic structures, gratings, microlenses and repeated arrays.
看纳米压印母版准备Open nanoimprint topic 看纳米压印工艺页Open NIL page适合超透镜、亚波长阵列、偏振器件和光栅。重点看周期、线宽、材料膜厚、刻蚀深度、SEM 和光学验收。For metalenses, subwavelength arrays, polarization optics and gratings.
看超表面加工Open metasurface topic适合沟槽、通孔、腔体、薄膜、梁、膜片和传感结构。先确认材料栈、深宽比、释放、封装和测试方式。For trenches, through holes, cavities, films, beams, membranes and sensor structures.
看 MEMS 加工Open MEMS topic适合 PDMS、SU-8 母模、玻璃/硅微通道和键合封装。重点看通道剖面、入口出口、压力和泄漏测试。For PDMS, SU-8 masters, glass/silicon channels and bonded microfluidic chips.
看微流控加工Open microfluidic topic适合微流控母模、MEMS 厚胶结构、微柱阵列和高深宽比图形。重点看胶厚、线宽、显影、应力和脱模方式。For microfluidic masters, MEMS thick structures, pillar arrays and high-aspect-ratio features.
看 SU-8 厚胶光刻Open SU-8 topic适合玻璃微通道、硅玻璃键合、打孔封接和耐溶剂芯片。重点看通道深度、接口、键合面和泄漏测试。For glass channels, silicon-glass bonding, ports and solvent-resistant chips.
看玻璃微流控芯片Open glass chip topic适合 MEMS 空腔、硅玻璃芯片和晶圆级封装。重点看材料组合、表面、颗粒、翘曲、对准、热预算和气密验收。For MEMS cavities, silicon-glass devices and wafer-level packaging.
看晶圆键合加工准备Open wafer bonding topic适合 MEMS 腔体、压力传感器和硅玻璃微流控封装。重点看玻璃体系、表面、对准、温度电压窗口与气密验收。For MEMS cavities, sensors and silicon-glass microfluidic packages.
看阳极键合加工准备Open anodic-bonding topic很多项目不是做不出来,而是验收说不清。提前定义 SEM 图、截面、轮廓、椭偏、电学或光学测试,后面少扯皮。Clear metrology avoids late-stage ambiguity and unhelpful disputes.
看 SEM 表征验收Open SEM topic 看 FIB 截面制样准备Open FIB topic 看 AFM 粗糙度测试准备Open AFM topic 看椭偏仪膜厚测试准备Open ellipsometry topic 看 XPS 表面成分分析准备Open XPS topic 看拉曼光谱测试准备Open Raman topic 看台阶仪膜厚测试准备Open profilometer topic只有 CAD 图、DXF 或 DWG 时,先确认单位、闭合图形、layer 映射、top cell、最小线宽和截图说明,再谈加工报价。For CAD/DXF/DWG inputs, check units, polygons, layers, top cell, CD and screenshots before quotation.
看 DXF 转 GDSOpen DXF to GDS topicGDS 能打开不等于能加工。提交前先看 top cell、layer/datatype、单位、最小尺寸、mark、有效面积和材料说明。An openable GDS is not automatically fabrication-ready; check hierarchy, layers, units, CDs, marks and area.
看 KLayout 版图检查Open KLayout check topic投递电子束曝光、光刻、刻蚀或掩膜版前,先确认 top cell、layer/datatype、单位、关键尺寸、对准 mark 和有效面积。Before EBL, lithography, etch or masks, check top cell, layers, units, CDs, marks and active area.
看 GDS 版图检查Open GDS layout check如果你搜的是“微纳加工怎么报价”“电子束曝光需要什么资料”“刻蚀能不能做”,先看常见问题。For quotation, input preparation and feasibility questions, start with the FAQ.
看微纳加工需求判断Open fabrication topicEBL、LDW、DUV、RIE、ICP、DRIE、PVD、ALD、Lift-off、NIL、SEM、GDS 这些缩写先看懂。Understand the abbreviations before matching the right route.
打开词库Open glossary版图、仿真与资料Layout, Simulation and Inputs
业内沟通最容易卡在版图和仿真到加工的转换:单位、layer、cell、最小线宽、材料 n/k、膜厚、周期、侧壁角和验收指标都可能影响报价。工具箱里整理了版图软件、光学仿真和提交前检查。Layout units, layers, cells, CD, n/k data, film thickness, period, sidewall and acceptance metrics all affect quotation and feasibility.
打开版图工具箱Open layout toolbox 打开仿真学习资料Open simulation resources