反应磁控溅射Reactive sputtering

在溅射过程中引入反应性气体，参与形成化合物薄膜。Reactive gas participates during sputtering to form a compound film.

原理图解准备中Preparing the mechanism study

在溅射过程中引入反应性气体，参与形成化合物薄膜。Reactive sputtering

非等比例原理示意，不代表设备或加工能力。Not-to-scale explanation, not an equipment or capability claim.

关键区别Key distinction

与只使用惰性工作气体的情况不同，靶面状态和反应气控制会影响结果。Reactive-gas control and changes at the target surface matter, unlike a purely inert working-gas example.

观察路径What to observe

靶材与反应气Target and reactive gas

成膜材料与反应性气体共同参与。Target material and reactive gas participate together.

溅出与反应Sputtering and reaction

浅深两种标记区分靶材与反应物。Two marker tones distinguish target material and reactant.

形成化合物膜A compound film forms

表面反应形成目标化合物，颜色不是化学测量。Reaction forms a compound; color is not chemical measurement.

靶面状态也重要The target state matters

反应也会改变靶面，不能只关注最终膜厚。Reaction can also modify the target surface.

项目输入Project inputs

化合物目标、靶材、成分、靶中毒与稳定窗口Compound, target, composition, target poisoning and stability.
整理项目需求Prepare a project brief ↗

进一步阅读Further reading

动画为非等比例原理示意，粒子、颜色、光路及材料厚度为解释性表达，不是测量结果或设备参数。Animation is not to scale. Particles, colors, optical paths and thicknesses are explanatory, not measurement results or tool parameters.