掩模定义图形The mask defines the pattern
掩模与胶层之间隔着投影光学。Projection optics separate mask and resist.
深紫外投影曝光DUV projection
常见 KrF 248 nm、ArF 193 nm 深紫外光配合投影光学，将掩模图形成像到胶层。Common KrF 248 nm and ArF 193 nm sources work with projection optics to image a mask pattern onto resist.
在首页观看原理演示Watch the interactive study ↗深紫外投影曝光DUV projection
常见 KrF 248 nm、ArF 193 nm 深紫外光配合投影光学，将掩模图形成像到胶层。DUV projection
关键区别Key distinction
常见 KrF、ArF 属不同光源；接触曝光与投影曝光也不能混为一谈。KrF and ArF are different sources. Contact exposure and projection imaging are different geometries.
观察路径What to observe
投影光路Projection through lenses
光经透镜成像，不是掩模贴着样品。Lenses project the pattern without mask contact.
胶层形成潜像A latent image forms
受光区域的化学响应还不是实体沟槽。An exposure response is not yet a physical opening.
显影得到开口Development opens the pattern
图形留在胶上，基底仍待后续转移。The developed resist precedes substrate pattern transfer.
项目输入Project inputs
光源、干式或浸没路线、胶体系、成像与套刻Source, dry or immersion route, resist, imaging and overlay.
整理项目需求Prepare a project brief ↗
进一步阅读Further reading
动画为非等比例原理示意，粒子、颜色、光路及材料厚度为解释性表达，不是测量结果或设备参数。Animation is not to scale. Particles, colors, optical paths and thicknesses are explanatory, not measurement results or tool parameters.