适合什么需求Good Fit
亚微米到微米级重复图形、多层套刻、晶圆级阵列、光电子器件、电极图形和需要比接触式光刻更稳定的项目。Sub-micron to micron patterns, overlay, wafer arrays, photonic devices and stable electrode routes.
专业词入口Topic Entry
DUV 和 Stepper 光刻，核心是尺寸、套刻和片子规格。DUV and stepper lithography depend on CD, overlay and wafer format.
DUV 光刻和 Stepper 光刻常用于更稳定的微米/亚微米图形、套刻、多 die 排布和晶圆级验证。是否适合，不只看最小线宽，还要看片径、掩膜版、对准策略和后续图形转移。DUV and stepper lithography support stable micron/sub-micron patterns, overlay and wafer-level validation.
需要准备什么Inputs Needed
GDS、目标线宽/间距、晶圆尺寸和厚度、die 排布、掩膜版要求、套刻层数、mark 规则、胶厚和验收方式。GDS, CD/space, wafer size and thickness, die map, mask requirements, overlay layers, marks, resist and metrology.
常见风险Common Risks
片子尺寸不兼容、mark 设计不适合机台、die map 缺失、掩膜版周期长、胶厚影响分辨率，以及后续刻蚀把图形拉偏。Format mismatch, incompatible marks, missing die map, mask lead time, resist limits and etch bias.
推荐下一步Next Step
先把 GDS、片径、套刻层和后续工艺整理成一页。Summarize GDS, wafer format, overlay layers and downstream process first.
微纳Hub 会先判断是 DUV/Stepper 更合适，还是激光直写、接触式光刻、电子束曝光或纳米压印母版更合适。对早期验证项目，路线选择会直接影响周期和预算。For early validation, route selection strongly affects schedule and budget.
提交 DUV/Stepper 光刻需求Submit DUV/stepper request