反射掩模A reflective mask
EUV 不使用普通透射掩模。EUV uses a reflective rather than transmissive mask.
极紫外曝光EUV exposure
使用约 13.5 nm 极紫外光、反射式掩模与反射光学，在真空光路中传递图形并曝光。Approximately 13.5 nm EUV light uses reflective masks and mirrors to convey a pattern through a vacuum optical path.
在首页观看原理演示Watch the interactive study ↗极紫外曝光EUV exposure
使用约 13.5 nm 极紫外光、反射式掩模与反射光学，在真空光路中传递图形并曝光。EUV exposure
关键区别Key distinction
不能把普通透射掩模加上 EUV 标签；此入口解释原理，不声明平台具备 EUV 产线。EUV is not a transmissive mask relabeled with a shorter wavelength. This study does not imply access to an EUV production line.
观察路径What to observe
反射光学传递Reflective optical path
反射镜引导光线；此处压缩光路说明关系。Mirrors guide light; this is a reduced optical schematic.
真空中的曝光Exposure in vacuum
光路需真空环境，胶内响应被视觉放大。The path requires vacuum; resist response is exaggerated.
显影与图形Development and pattern
曝光与显影分开，未模拟真实缺陷统计。Exposure and development remain separate; stochastic defects are not simulated.
项目输入Project inputs
材料与工艺研究目标、胶体系、缺陷与统计性Research objective, resist system and stochastic defect considerations.
整理项目需求Prepare a project brief ↗
进一步阅读Further reading
动画为非等比例原理示意，粒子、颜色、光路及材料厚度为解释性表达，不是测量结果或设备参数。Animation is not to scale. Particles, colors, optical paths and thicknesses are explanatory, not measurement results or tool parameters.