剥离 Lift-offLift-off
溶解除去牺牲胶及其上方多余膜层，保留开口内的沉积膜。Removing sacrificial resist and unwanted overlying film leaves deposited material in the former openings.
在首页观看原理演示Watch the interactive study ↗剥离 Lift-offLift-off
溶解除去牺牲胶及其上方多余膜层，保留开口内的沉积膜。Lift-off
关键区别Key distinction
不是把基底刻出沟槽，也不等于所有去胶；侧壁连续包膜会影响剥离。Lift-off is not substrate etching or a synonym for every resist-strip process. Continuous sidewall coating may impede removal.
项目输入Project inputs
胶轮廓、下切、膜厚、沉积方向与材料兼容性Resist profile, undercut, film thickness, deposition direction and compatibility.
整理项目需求Prepare a project brief ↗
进一步阅读Further reading
动画为非等比例原理示意，粒子、颜色、光路及材料厚度为解释性表达，不是测量结果或设备参数。Animation is not to scale. Particles, colors, optical paths and thicknesses are explanatory, not measurement results or tool parameters.