图形转移与复制Pattern transfer & replication

湿法刻蚀Wet etching

液相反应去除可接触的材料,并输运反应产物。Liquid-phase reactions remove accessible material while reaction products are transported away.

在首页观看原理演示Watch the interactive study ↗

原理图解准备中Preparing the mechanism study

湿法刻蚀Wet etching

液相反应去除可接触的材料,并输运反应产物。Wet etching

非等比例原理示意,不代表设备或加工能力。Not-to-scale explanation, not an equipment or capability claim.

关键区别Key distinction

本例展示侧向下切;湿法并非全部各向同性,晶向相关刻蚀需另看。The example shows lateral undercut. Wet etches are not universally isotropic; crystal-dependent behavior is separate.

观察路径What to observe

液体接触开口Liquid reaches openings

掩模限定接触位置,液体与暴露表面反应。Liquid reacts with exposed material through mask openings.

向下与侧向去除Vertical and lateral removal

本例横向侵蚀形成下切,不代表全部湿刻。Lateral removal creates undercut in this example, not all wet etches.

产物向外输运Products leave the interface

液体接触与产物排出共同影响局部过程。Reactant access and product removal affect the local process.

观察下切轮廓Inspect the undercut

掩模开口与下方被刻轮廓不再同宽。The mask opening and etched profile have different widths.

项目输入Project inputs

材料与晶向、掩模兼容性、下切、释放和干燥Material and orientation, mask compatibility, undercut, release and drying.
整理项目需求Prepare a project brief ↗

进一步阅读Further reading

相关技术专题Related technical topic ↗
Utah Nanofab:干法与湿法刻蚀 ↗

动画为非等比例原理示意,粒子、颜色、光路及材料厚度为解释性表达,不是测量结果或设备参数。Animation is not to scale. Particles, colors, optical paths and thicknesses are explanatory, not measurement results or tool parameters.