适合什么需求Good For
硅各向异性腐蚀、氧化层或氮化硅开窗、金属图形湿法腐蚀、牺牲层释放，以及对低等离子体损伤有要求的项目。Anisotropic silicon etch, dielectric openings, metal patterning, sacrificial release and low-plasma-damage projects.
专业词入口Topic Entry
湿法刻蚀，先把材料、晶向、掩膜与侧蚀边界说清楚。Wet etching starts with material, crystal orientation, mask and undercut limits.
湿法刻蚀可用于硅、二氧化硅、氮化硅和多种金属的去除或图形转移。是否适合取决于材料栈、腐蚀液兼容性、晶向、选择比、侧蚀、温度与搅拌条件，而不只是目标深度。Wet etching can remove silicon, dielectrics and metals, with feasibility driven by chemistry, crystal orientation, selectivity, undercut and process control.
需要准备什么Prepare First
完整材料栈与膜厚、硅片晶向、开口尺寸、目标深度或剩余厚度、掩膜材料、正背面保护、样品尺寸数量和清洗限制。Full stack, thickness, wafer orientation, opening size, target depth, mask, backside protection, sample format and cleaning limits.
常见风险Common Risks
侧蚀导致尺寸偏差，针孔或掩膜脱落，材料选择比不足，晶向造成轮廓变化，腐蚀残留，以及正背面或已有金属被意外侵蚀。Undercut, mask pinholes, poor selectivity, orientation-dependent profiles, residue and unintended attack on existing layers.
推荐下一步Next Step
先把“用药液腐蚀”转换成材料栈、轮廓与验收条件。Translate the wet-etch request into stack, profile and acceptance conditions.
请提交材料栈、晶向、图形开口、目标深度与容差、掩膜和保护方式、可接受侧蚀、样品数量及后续工艺。微纳Hub 会先判断湿法路线与 RIE、ICP 等干法路线的边界，并核对腐蚀液兼容性和验收方法。Share the stack, orientation, openings, depth tolerance, mask, protection, undercut limit, quantity and downstream steps so wet and dry routes can be compared.
提交湿法刻蚀需求Submit wet-etch request查看刻蚀工艺导航Open etch route