适合什么需求Good Fit
线宽在微米级、面积不太小、允许使用掩膜版，并且后续要做湿法/干法刻蚀、金属 Lift-off 或聚合物图形。Micron-scale patterns with a mask route, followed by etch, lift-off or polymer patterning.
专业词入口Topic Entry
接触式光刻，先确认掩膜版和后续工艺。For contact lithography, clarify mask and downstream process first.
接触式光刻适合微米级图形、金属电极、刻蚀掩膜、微流控图形和小批量样品。它通常不是单独完成项目，而是和显影、刻蚀、镀膜、Lift-off 或检测连在一起。Contact UV lithography is useful for micron-scale patterns, electrodes, etch masks and small sample batches.
需要准备什么Inputs Needed
GDS/DXF、掩膜版尺寸、正胶/负胶倾向、目标胶厚、基底尺寸、最小线宽、对准 mark、样品数量和后续工艺。GDS/DXF, mask size, resist tone, resist thickness, substrate size, CD, marks, quantity and next process.
常见风险Common Risks
掩膜版方向做反、mark 不够、胶厚和图形尺寸不匹配、接触损伤、颗粒导致缺陷，以及后续 Lift-off 边界不干净。Mask polarity, alignment marks, resist mismatch, contact damage, particles and poor lift-off edges.
推荐下一步Next Step
把掩膜版、胶厚和后续刻蚀或 Lift-off 一起发来。Send mask, resist thickness and downstream etch or lift-off together.
微纳Hub 会先判断接触式光刻是否足够，还是需要激光直写、Stepper/DUV、电子束曝光或重新调整版图。不要只问“能不能光刻”，要把后续要转移到什么材料上说清楚。The right route may be contact UV, LDW, stepper/DUV, EBL or a layout change.
提交接触式光刻需求Submit contact lithography request