适合什么需求Good For
硅基 MEMS 深槽、贯穿孔、悬臂梁释放前图形、硅微流控通道、光学台阶，以及需要接近垂直侧壁的高深宽比结构。Silicon MEMS trenches, through features, release patterns, microchannels, optical steps and near-vertical high-aspect-ratio structures.
专业词入口Topic Entry
DRIE 深硅刻蚀，先把深宽比、开口率和侧壁验收说清楚。For DRIE, define aspect ratio, open area and sidewall acceptance first.
DRIE（深反应离子刻蚀）常用于 MEMS 深槽、硅通孔、微流控通道、惯性器件和高深宽比结构。设备名称不是第一步；硅片规格、结构深度、局部与全片开口率、掩膜余量、背面状态和截面验收会共同决定路线。DRIE serves MEMS trenches, through-silicon features, channels and high-aspect-ratio structures. Wafer, depth, open area, mask and acceptance drive the route.
需要准备什么Prepare First
硅片直径与厚度、晶向、正背面膜层、目标深度、最小开口、局部/全片开口率、掩膜材料与厚度、是否刻穿、载片和背面保护要求。Wafer size/thickness, orientation, films, depth, minimum opening, open area, mask, through-etch, carrier and backside protection.
常见风险Common Risks
ARDE 导致窄槽刻不够深，microloading 造成片内深度差，Bosch scallop 或侧壁弓形超标，掩膜提前耗尽，刻穿时背面冷却或停刻层失效。ARDE, microloading, excess Bosch scallops, bowing, mask loss and backside cooling or stop-layer failures are common risks.
推荐下一步Next Step
先发截面示意、GDS 和硅片堆栈，再讨论 Bosch 工艺窗口。Send cross-section, GDS and wafer stack before discussing the Bosch window.
建议同时标出关键深度容差、允许的侧壁角与 scallop、底部形貌、是否需要截面 SEM。微纳Hub 会先判断掩膜余量、深宽比、开口率和刻穿风险，再匹配合适的 DRIE 平台与验收方式。Define depth tolerance, wall angle, scallop, bottom profile and cross-section SEM needs before matching a DRIE platform.
提交 DRIE 深硅刻蚀需求Submit DRIE request