EBL 套刻对准标记设计EBL alignment marks

全局/局部标记、坐标约定与加工交付检查。Global/local references, coordinate conventions and fabrication handoff checks.

多层电极、波导耦合区和已有结构上的二次曝光，除了器件图形，还需要把新图层放进已有样品的坐标系统。Cornell CNF 强调，对准标记必须连同完整工艺流程一起规划。微纳Hub 建议交付前回答三件事：设备在哪里找标记、找到后以哪个坐标为准、后续工艺完成时怎样验收。For multilayer electrodes, waveguide couplers and exposure over existing structures, the new layer must be registered to the sample. Cornell CNF recommends planning marks with the complete process flow. Our handoff checklist covers mark location, coordinate conventions and acceptance after processing. [1]

01 / GLOBAL & LOCAL

先区分全局标记和局部标记。Separate global and local references.

全局标记用于建立样品级的参考；局部或 chip 标记用于对应芯片、图形或阵列的局部对准。具体数量、形状、坐标解释和校正方式取决于设备及作业设置，不应把某个平台的模板直接当成所有 EBL 的统一规范。Cornell 的 JEOL 说明和 EPFL 的 EBPG 说明就采用了不同的标记方案。Global marks establish a sample-level reference; local or chip marks support alignment of individual regions. Mark count, geometry and correction rules depend on the tool and job configuration. Cornell’s JEOL guidance and EPFL’s EBPG guidance are platform-specific schemes, not universal templates. [1] [3]

02 / COORDINATES

坐标表必须说明“相对谁”。Coordinates need a reference.

DTU Nanolab 的 JEOL 作业说明分别使用晶圆坐标中的全局标记位置，以及芯片坐标中的 chip mark 位置。仅给一串 X、Y 数字，仍不足以消除坐标歧义。DTU distinguishes global positions in wafer coordinates from chip-mark positions in chip coordinates. A list of X/Y values is incomplete without its reference. [2]

建议提供一张标注图和一份坐标表：说明 top cell、单位、原点、X/Y 正方向、样品正面及装片方向；区分样品中心、芯片中心与设计原点；标出实际已有 mark 和本轮待加工图形。旋转或镜像后的交付文件应重新核对，不靠一句“方向一样”代替。Supply the top cell, units, origin, axis directions, sample face and loading orientation. Distinguish sample, chip and design origins, and identify existing marks and the new layer. Recheck files after rotation or mirroring rather than relying on a verbal orientation description.

03 / PROCESS COMPATIBILITY

按工艺顺序检查标记是否仍可识别。Check marks through the process flow.

标记不仅要在版图里存在，还要在实际样品上具有设备可识别的信号。EPFL 的说明把形貌与材料对比、边缘质量，以及找标记时电子束对周围胶的曝光都列为需要关注的条件；多层加工因此要考虑备用标记和分层使用安排。Marks need usable contrast on the actual sample. EPFL discusses topography or material contrast, edge quality and resist exposure during marker searches. These considerations motivate spare marks and a layer-by-layer usage plan. [3]

微纳Hub 建议在工艺表中单列“mark 状态”：生成后、去胶后、镀膜后、刻蚀后分别判断是否被覆盖、损伤或改变。不要在缺少设备要求时承诺一套标记反复使用，也不要把文献中的金属厚度或刻蚀深度直接套用到不同材料堆栈。Our process checklist records whether stripping, coating, deposition or etching could obscure or modify a mark. Do not assume indefinite mark reuse. Published dimensions are not a substitute for the receiving facility’s requirements for the actual material stack.

交付检查表：验收先约定，不把设备指标当成样品承诺。Handoff checklist: agree acceptance, not a borrowed specification.

以下是微纳Hub 的项目交接建议，而非某台设备的精度保证。The following is an MN Fab Hub handoff proposal, not a performance guarantee.

套刻对象Layer pair哪一层对哪一层，哪些结构最敏感。Which layers align, and which structures are most sensitive.

版图版本Layout revision文件名、版本、top cell、layer/datatype 与单位。Filename, revision, top cell, layer/datatype and units.

标记地图Mark map标记编号、坐标参照、生成工序、备用标记。Mark IDs, coordinate references, fabrication step and spare marks.

实物状态Sample condition基底与膜层、已做工艺、标记区域的现有照片或测试记录。Substrate, films, process history, and existing images or measurements of the mark areas.

验收方式Acceptance测量位置、测量方法、X/Y 偏差分别如何报告，以及判定范围。Measurement locations, method, separate X/Y reporting and the acceptance area.

异常处置Exceptions找不到或损伤标记时是否停机，以及改用其他标记前由谁确认。Whether a failed or damaged mark requires stopping, and who approves an alternative.

如果需求里只有“套刻误差不超过某个数”，还应补上测量区域和统计口径：是单个点、若干关键位置，还是整个芯片范围；判据是在曝光显影后，还是后续图形转移之后。未确认的项可以先标“待讨论”，不要填一个看似精确的默认值。A numeric overlay target also needs a measurement stage and sampling rule: one point, selected critical locations or the whole chip; after development or after pattern transfer. Leave unresolved inputs marked for discussion rather than inserting an apparently precise default.

适合什么需求SUITABLE PROJECTS

已有图形上的二次曝光与多层交接。Aligned exposure and multilayer handoffs.

适合已有图形上的二次 EBL、多层纳米电极、光学与电子束混合工艺，以及需要把版图交给外部平台加工的科研样品。不替代加工平台的设备培训、作业规范或具体工艺评审。Suitable for aligned EBL over existing patterns, multilayer electrodes, mixed optical/e-beam workflows and research-sample handoffs. This checklist does not replace facility training, operating procedures or project-specific review.

官方来源与使用边界Official sources and scope

以下为各设施的设备相关说明，核查于 2026-09-07；不是今日技术突破，也不是微纳Hub 的设备能力承诺。These are facility-specific technical references, checked on September 7, 2026—not a new breakthrough or a statement of MN Fab Hub equipment capabilities.

下一步：先发交付包，再讨论路线。Next: share the handoff package.

准备版图、标记坐标表、材料膜层、既有工艺记录和套刻目标，微纳Hub 可协助梳理资料缺口、工艺路线和资源对接；可制造性、具体精度与周期需由项目条件和实际加工资源共同确认。Send the layout, mark coordinates, material stack, process history and overlay target. MN Fab Hub can help identify missing inputs and coordinate process resources. Feasibility, accuracy and schedule remain subject to the actual sample and facility review.