电子束直写适合什么需求Good Structures
几十纳米到数百纳米线宽、周期阵列、超表面单元、纳米光栅、波导耦合区、小面积器件电极和高精度对准图形。Tens-to-hundreds nm CDs, arrays, metasurfaces, nanogratings, couplers, device electrodes and aligned patterns.
专业词入口Topic Entry
电子束直写与电子束曝光加工，先把版图和验收说清楚。For electron-beam direct writing, clarify layout and acceptance first.
电子束曝光加工，也常叫电子束直写或 EBL，适合纳米线宽、小面积高精度图形、超表面、光栅、纳米电极和套刻验证。真正影响报价和可行性的，是版图复杂度、最小线宽、曝光面积、胶型、基底状态和 SEM 验收标准。EBL is used for nanoscale features, high-precision small-area patterns, metasurfaces, gratings, nanoelectrodes and overlay validation.
先准备什么Prepare First
GDS/DXF、layer 说明、最小线宽/线距、图形面积、是否套刻、mark 位置、基底材料、膜层、胶型倾向和数量。GDS/DXF, layers, CD/space, area, overlay, marks, substrate, films, resist preference and quantity.
容易踩的坑Common Risks
空白条不等于解理道；效果图不能代替 GDS；大面积高密度图形会显著影响写入时间；SEM 图展示和计量验收要分开说。A blank stripe is not a cleaving street; renders are not GDS; dense large-area patterns change write time.
推荐下一步Next Step
先发版图，再判断是 EBL、激光直写还是掩膜光刻。Send the layout, then choose EBL, LDW or mask lithography.
如果图形最小尺寸、面积和数量不匹配，电子束曝光不一定是最合适路线。微纳Hub 会先看版图和样品条件，再帮你判断是否适合 EBL，还是该换成激光直写、接触式光刻、Stepper/DUV 或纳米压印母版路线。EBL is not always the best route. Layout size, area and quantity may point to LDW, mask lithography, DUV or nanoimprint.
提交电子束曝光需求Submit EBL request