适合什么需求Good For
硅、氧化硅、氮化硅、二氧化钛、金属或聚合物图形转移；MEMS 深硅槽、释放结构、光学器件台阶和微流控通道。Pattern transfer in silicon, oxide, nitride, TiO2, metals or polymers; MEMS trenches, releases, optical steps and microfluidic channels.
专业词入口Topic Entry
ICP、RIE、DRIE 刻蚀，先把材料、深度和掩膜说清楚。For ICP, RIE and DRIE, clarify material, depth and mask first.
刻蚀不是只问“能不能刻”。不同材料、目标深度、掩膜厚度、选择比、侧壁角度和表面粗糙度，会把路线分到 RIE、ICP、DRIE、湿法刻蚀或组合工艺。前期输入越清楚，越容易判断风险。Etch route depends on material, depth, mask, selectivity, sidewall angle and roughness, not only whether it can be etched.
先准备什么Prepare First
材料堆栈、目标深度、最小线宽、开口面积、掩膜材料和厚度、是否允许过刻、片源尺寸、截面 SEM 或轮廓仪验收要求。Material stack, target depth, CD, open area, mask type/thickness, over-etch allowance, wafer size and SEM/profile acceptance.
常见风险Common Risks
光刻胶太薄导致掩膜耗尽，深硅刻蚀 scallop 超预期，侧壁倾斜影响器件性能，过刻损伤下层膜，截面样品没有提前规划。Thin resist, excess DRIE scalloping, sloped sidewalls, underlayer damage and missing cross-section planning are frequent issues.
推荐下一步Next Step
先给材料堆栈和目标深度，再讨论设备名。Start with stack and depth before equipment names.
很多搜索词会直接写 ICP、RIE 或 DRIE，但真正需要先判断的是材料体系和验收指标。微纳Hub 会先看掩膜、深宽比、选择比和检测方式，再帮你判断找哪类刻蚀平台更合适。Search terms often name ICP, RIE or DRIE, but the route starts from stack, aspect ratio, selectivity and metrology.
提交刻蚀需求Submit etch request