适合什么需求Good For
微米级电极、窗口、光栅、波导、微流控图形、MEMS 开口、套刻验证和小批量样品。若线宽进入亚微米或纳米尺度，要再评估 EBL 或 DUV。Micron-scale electrodes, openings, gratings, waveguides, microfluidics, MEMS windows, overlay checks and small sample batches.
专业词入口Topic Entry
激光直写和光刻加工，先按线宽、面积和掩膜版判断路线。For LDW and lithography, route by CD, area and mask needs.
激光直写适合微米级快速验证和少量样品，接触式光刻适合有掩膜版的重复图形，Stepper 或 DUV 更看重套刻、片源和工艺窗口。咨询前先把版图、最小线宽、曝光面积、基底和验收方式说清楚。LDW suits micron-scale validation and small batches; contact lithography suits mask-based repeats; Stepper or DUV depends on overlay, wafers and process windows.
先准备什么Prepare First
GDS/DXF/PDF、最小线宽和线距、曝光面积、片源尺寸、膜层、数量、是否已有掩膜版、对准 mark、正负胶和后续刻蚀或 Lift-off。GDS/DXF/PDF, CD/space, exposure area, wafer size, films, quantity, mask status, marks, resist tone and downstream etch or lift-off.
常见风险Common Risks
版图单位错误、图形未闭合、掩膜版极性反了、mark 不适合设备、胶厚和后续刻蚀不匹配，都会让看似简单的光刻变成返工。Wrong units, open polygons, inverted mask tone, unsuitable marks or resist thickness mismatch can force rework.
推荐下一步Next Step
不要先问“多少钱”，先判断 LDW、接触式光刻、Stepper 还是 DUV。Before price, choose LDW, contact lithography, Stepper or DUV.
同一个“光刻加工”需求，按线宽、面积、套刻精度、掩膜版和样品数量会走完全不同的路线。微纳Hub 可以先帮你看版图和样品条件，再决定是快速直写、掩膜光刻，还是需要更高精度平台。The same lithography request can take very different routes depending on CD, area, overlay, mask and quantity.
提交光刻加工需求Submit lithography request