专业词入口Topic Entry

晶圆切割与划片，先确认材料、街区和器件保护边界。Wafer dicing starts with the material, streets and device-protection boundary.

晶圆划片并不是只给一个芯片尺寸即可。刀片或激光路线、崩边控制和交付良率，会受到材料、片厚、膜层、划片道宽度、背面胶膜、正面结构高度以及清洗限制影响。Dicing route, chipping and yield depend on material, thickness, films, street width, mounting, front-side topography and cleaning limits.

01

适合什么需求Good For

硅、玻璃、石英、陶瓷及带器件晶圆分割，减薄后划片，小尺寸 die 制备，以及需要控制崩边、污染或晶粒方向的样品。Silicon, glass, quartz, ceramic and device wafers, including thinned wafers and small dies.

02

需要准备什么Prepare First

材料、直径和厚度，正背面膜层，die 尺寸与排布，划片道宽度和位置，器件边缘安全距离，数量、编号及交付方式。Material, diameter, thickness, films, die map, street width, keep-out distance, quantity and delivery format.

03

常见风险Common Risks

正背面崩边、微裂纹、器件污染、薄片破损、刀痕偏移、金属膜卷边，以及清洗或贴膜对敏感结构造成影响。Chipping, microcracks, contamination, thin-wafer breakage, kerf offset, film peeling and handling damage.

推荐下一步Next Step

先用带尺寸的 die map 标出切割线、禁入区和方向。Mark cut lines, keep-out zones and orientation on a dimensioned die map.

请提交晶圆或样品照片、材料与厚度、完整 die map、划片道宽度、正背面膜层和可接受崩边范围。微纳Hub 会先判断刀片划片、激光切割或先减薄后切割的路线，并确认贴膜、清洗、编号和包装要求。Share sample images, material, thickness, die map, streets, films and acceptable chipping so blade, laser or thinning-first routes can be compared.

提交晶圆切割需求Submit dicing request查看切割减薄工艺导航Open dicing route