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SiO2、SiN、光刻胶、聚合物和部分半导体薄膜的膜厚与均匀性;沉积或氧化工艺前后对比;折射率、消光系数和光学模型验证。Thickness, uniformity and optical constants of dielectric, resist, polymer and selected semiconductor films.
专业词入口Topic Entry
椭偏可非接触测量透明或半透明薄膜的厚度、折射率 n 与消光系数 k。结果依赖模型,不能只写“测膜厚”;基底、层数、粗糙层、波段和参数约束都会影响拟合是否可信。Ellipsometry can measure film thickness and optical constants without contact, but the result is model-dependent and requires a defined stack, spectral range and constraints.
SiO2、SiN、光刻胶、聚合物和部分半导体薄膜的膜厚与均匀性;沉积或氧化工艺前后对比;折射率、消光系数和光学模型验证。Thickness, uniformity and optical constants of dielectric, resist, polymer and selected semiconductor films.
基底和完整膜层顺序、各层预估厚度、材料是否吸收或各向异性、波长与入射角范围、测点图、背面状态,以及需要膜厚还是 n/k 原始结果。Substrate, full stack, expected thickness, absorption or anisotropy, spectral range, angles, point map and required outputs.
多层参数耦合、膜层太薄或太厚、背面反射、表面粗糙与渐变层未建模、小样品光斑越界,以及只交拟合值而缺少误差和模型说明。Parameter correlation, unsuitable thickness, backside reflection, omitted roughness, spot-size limits and under-documented fits.
推荐下一步Next Step
请提交样品材料、完整膜层顺序、预估厚度、样品尺寸和测点、制备历史、波段要求,以及是否需要 n/k、拟合误差和原始光谱。微纳Hub 会先判断椭偏、台阶仪、AFM 或截面 SEM 哪种组合更合适。Share the stack, expected thickness, sample map, process history, spectral needs and requested fit data so ellipsometry can be compared with profilometry, AFM or cross-section SEM.
提交椭偏测试需求Submit ellipsometry request查看表征与测试导航Open metrology route