专业词入口Topic Entry

离子束刻蚀（IBE）加工，先判断材料能否用物理溅射稳定转移图形。Ion beam etching starts with material stack and pattern-transfer feasibility.

IBE/离子束铣削常用于金属、磁性材料、贵金属和部分难以用反应性等离子体刻蚀的薄膜。询价不能只给“刻多少纳米”，还要说明完整材料栈、掩膜、图形密度、侧壁目标和可接受的再沉积。IBE is often used for metals, magnetic films, noble metals and materials without a stable reactive-plasma route.

01

适合什么需求Good For

金属电极、磁阻器件、多层磁性薄膜、光学金属膜，以及需要低化学选择性的精密薄膜图形转移。Metal electrodes, magnetic stacks, optical metal films and physical pattern transfer.

02

需要准备什么Prepare First

从基底到顶层的材料与厚度、目标刻蚀终点、最小线宽/间距、有效面积、掩膜材料与厚度、样品尺寸、允许温升和验收点位。Full stack, endpoint, CDs, area, mask, sample size, thermal limit and measurement map.

03

常见风险Common Risks

侧壁再沉积、围栏残留、掩膜消耗、选择比不足、充电与温升、刻蚀不均匀，以及多层膜终点判断偏差。Redeposition, fencing, mask loss, charging, heating, nonuniformity and endpoint error.

推荐下一步Next Step

先比较 IBE、ICP/RIE 和湿法路线，再决定掩膜与终点方案。Compare IBE, ICP/RIE and wet routes before fixing the mask and endpoint.

请提交材料栈截面、GDS 或关键图形截图、目标深度和 SEM 验收要求。微纳Hub 会先判断是否需要倾斜/旋转刻蚀、终点监测、冷却或刻后清洗，并把再沉积风险写进工艺沟通。Share the stack, layout, target depth and SEM criteria so the route can include angle, rotation, endpoint, cooling and cleaning.

提交离子束刻蚀需求Submit IBE request查看刻蚀工艺导航Open etch route