适合什么需求Good For
- 硅、石英、氮化硅、二氧化钛、金属或聚合物刻蚀Etching silicon, quartz, SiN, TiO2, metals or polymers
- RIE、ICP、DRIE、湿法腐蚀和释放结构RIE, ICP, DRIE, wet etch and release structures
- 需要控制深度、侧壁、选择比和残留的项目Projects requiring depth, sidewall, selectivity and residue control
工艺小站 02Process Stop 02
刻蚀与图形转移Etch & Pattern Transfer
适合干法刻蚀、湿法刻蚀、深硅刻蚀、释放结构和侧壁形貌优化。For dry etch, wet etch, DRIE, release structures and sidewall-profile optimization.
先准备什么Prepare First
- 材料体系和膜层厚度Material stack and film thickness
- 目标刻蚀深度、是否过刻、容差要求Target etch depth, over-etch and tolerance
- 掩膜材料、光刻胶厚度和选择比预期Mask material, resist thickness and selectivity expectation
- 截面 SEM、表面形貌或验收图片要求Cross-section SEM, morphology or acceptance-image needs
通常会找谁Who Usually Helps
- ICP/RIE/DRIE 工艺平台ICP/RIE/DRIE platforms
- 湿法刻蚀平台Wet etch platforms
- MEMS 加工公司MEMS fabrication companies
- 具备材料刻蚀窗口经验的工艺供应商Suppliers with material-specific etch windows
先把这些说清楚What to Spell Out
把这些说清楚，别人就不用隔空猜样品；报价和可行性也会靠谱很多。When these points are clear, nobody has to guess the sample from thin air; feasibility and quotes get much more reliable.
懒人邮件模板Quick Email Template
1. 项目目标：想做什么结构，用于什么测试或验证。1. Project goal: target structure and intended test or validation.
2. 材料与样品：衬底、膜层、尺寸、数量、来源和特殊处理限制。2. Material and sample: substrate, films, size, quantity, source and handling limits.
3. 版图与尺寸：GDS/截图、最小线宽/线距、面积、Layer/Cell 和对准要求。3. Layout and dimensions: GDS/screenshots, CD/space, area, Layer/Cell and alignment.
4. 工艺与验收：目标深度/膜厚、误差、检测方式、交付形式和期望时间。4. Process and acceptance: depth/thickness, tolerance, metrology, deliverables and schedule.