光刻胶去胶与灰化Photoresist stripping and ashing

先分清是完整去胶、开口去残胶，还是表面清洗。Separate full stripping, patterned descum and surface cleaning before selecting a route.

适合什么需求Suitable projects

本页面向刻蚀、沉积或检测后的完整光刻胶去除：例如需交付裸露表面、准备下一层工艺，或排查显影/刻蚀后残留。它不同于保留图形的氧等离子去残胶（Descum）；后者只清理开口底部，不能直接替代整片去胶验收。This guide is for full resist removal after etch, deposition or inspection—such as preparing a bare surface for the next layer or reviewing post-process residue. It is distinct from patterned descum, which preserves the mask and clears openings.

方法先匹配材料与前段历史Match method to materials and process history

Cornell CNF 的氧等离子设备用于光刻胶去除和 Descum，并将低功率、低温条件用于较温和的去残胶。[1] 伊利诺伊大学的洁净室则列出丙酮和 AZ 400T 等湿法去胶选择。[2] 这些设备资料说明的是方法类别，而不是可照搬的配方：胶种、是否经历高温或刻蚀、暴露金属/介质层和下游工艺都需由接收平台确认。Cornell CNF lists oxygen-plasma tools for resist stripping and descum, with lower power and temperature for gentler descum. [1] Illinois also lists wet stripping options including acetone and AZ 400T. [2] These describe method classes, not transferable recipes: resist type, thermal/etch history, exposed films and the next process all require facility review.

询价与送样资料Inputs for quotation and handoff

请提供基底与所有暴露膜层、样品尺寸和数量、胶型号与实测胶厚、涂胶/烘烤/曝光/显影记录、是否经过刻蚀或沉积、需要保护的区域、背面状态及后续工序。若已有异常，补充处理前后显微图、残留位置、关键尺寸与允许变化；未知项目标为待平台确认。Provide substrate and exposed films, sample size and count, resist grade and measured thickness, coat/bake/exposure/development history, any etch or deposition, protected regions, backside condition and next step. For failures, add before/after microscopy, residue locations, critical dimensions and allowed change; mark unknowns for review.

常见风险与验收边界Risks and acceptance boundaries

不要只以“处理完成”作为验收。建议在试片中分别检查残胶、颗粒/再沉积、关键尺寸、暴露金属或介质表面状态，以及后续膜层附着或电学表现。经历强刻蚀或高温后的硬化胶，不能默认与普通新鲜胶使用同一窗口；Lift-off 样品还应与“金属已沉积后的剥离”单独区分。Do not accept a process merely because a cycle has run. In a pilot, check residue, particles/redeposition, critical dimensions, exposed-film condition and, where relevant, later adhesion or electrical behavior. Hardened resist after strong etch or heat cannot be assumed to share a window with fresh resist; distinguish it from post-metal lift-off as well.

下一步Next step

向微纳Hub提交材料栈、胶工艺历史、目标状态与检测要求；先确认是完整去胶还是 Descum，再由实际平台确认处理方式、试片、报价与周期。需要清理显影开口但保留胶图形时，请转至氧等离子去残胶专题。Send MN Fab Hub the stack, resist history, desired end state and inspection needs. First confirm full stripping versus descum; the receiving facility then confirms method, pilot, price and schedule. For clearing developed openings while retaining the mask, use the oxygen-plasma descum guide.

官方资料Official references

核查日期：2026-10-15。平台资料用于说明用途与参数类别；本文项目清单为微纳Hub建议，具体能力由接收平台确认。Checked October 15, 2026. Facility references explain applications and parameter categories. The receiving facility confirms capability.