RCA 晶圆清洗：先确认洁净等级、暴露材料与下一道工艺。RCA wafer cleaning starts with cleanliness class, exposed materials and the next process.

RCA/Standard Clean 常用于硅基底进入氧化、扩散、沉积等敏感步骤前的湿法清洗；它不是适用于所有已加工样品的通用“洗片”。RCA/Standard Clean is commonly used before sensitive silicon processing, not as a generic wash for every processed sample.

适合什么需求Suitable projects

适用于新硅片或经平台确认可进入洁净湿法线的硅基样品，在热氧化、扩散、LPCVD 等前需要明确表面状态的项目。Notre Dame 的 MOS clean 台明确限制为未经历金属或介质沉积的硅片；不同平台的准入等级、材料白名单和槽位流程并不相同。[1]Use it for new silicon wafers or silicon samples explicitly accepted into a clean wet line before oxidation, diffusion or LPCVD. Facility eligibility, material lists and workflows vary. [1]

SC-1、SC-2、HF dip 与去胶要分开说Keep SC-1, SC-2, HF dip and stripping distinct

常见 RCA 路线会用 SC-1 处理有机物与颗粒相关污染，再以 SC-2 针对离子/金属类污染；有些路线另含 HF dip 处理表面氧化层。Georgia Tech 的公开工艺将这些步骤、冲洗与干燥分开记录。[2] 这不等于可直接套用配方或顺序：光刻胶、金属、电极、玻璃、III-V、二维材料和已完成器件都必须单独确认兼容性。Public RCA flows commonly separate SC-1, SC-2, optional HF treatment, rinse and dry steps. [2] That does not make one recipe or sequence transferable to resist-coated, metalized, glass, III-V, 2D-material or completed-device samples.

询价与送样资料Inputs for quotation and sample handoff

请提供基底、尺寸、片数和是否整片；所有暴露材料与膜层；是否经历过金属、介质、光刻胶、划片、键合或外部实验；拟进入的下一道工艺；目标是去颗粒/有机物、去金属离子、去原生氧化层，还是仅做表面活化。同步写清允许的材料损耗、是否可用 HF、载具、洁净等级、检测方式和交期。未知项标为待平台确认。Provide substrate, dimensions, count and whole-wafer status; every exposed layer and process history; the next process; and whether the objective is particles/organics, metal ions, native oxide or activation. Include allowed material loss, HF eligibility, carrier, cleanliness class, inspection and schedule.

常见风险与验收Risks and acceptance

最大风险通常不是“洗得不够”，而是把不该进入洁净线的样品带入，或把清洗、刻蚀、去胶与表面活化混成同一个要求。应在进线前由接收平台核对污染历史、槽位兼容、化学品边界和废液路线。验收宜约定可见颗粒/残胶检查、接触角或指定表征、干燥与包装方式；不能仅以“看起来干净”代替可追溯记录。The primary risk is often incompatible sample history rather than insufficient cleaning. Have the receiving facility review contamination history, bath compatibility and chemical boundaries before entry. Agree inspection, metrology, drying and packaging instead of relying on appearance alone.

下一步Next step

先把样品历史与下一道工艺整理成一页，再让平台判断是否为 RCA、专用金属线清洗、去胶、氧等离子 descum 或其他表面处理。微纳Hub可协助把需求翻译成可确认的送样清单，不替代接收平台的安全与工艺审批。Turn sample history and the next process into a one-page handoff, then let the facility select RCA, a metal-line clean, stripping, oxygen descum or another treatment.

资料来源References

核查日期：2026-10-12。公开平台资料用于说明工艺边界；本页送样清单为微纳Hub项目沟通建议，不构成化学操作说明或设备能力承诺。Checked October 12, 2026. Facility references describe process boundaries; this handoff guide is not an operating recipe or capability commitment.