专业词入口Topic Entry

ALD 原子层沉积，先确认材料体系、温度窗口和共形覆盖目标。ALD starts with the material, thermal window and conformality target.

ALD 适合以循环反应方式形成厚度可控、覆盖性较好的薄膜，常用于高深宽比结构、介质层、钝化层和界面工程。能否沉积不能只看材料名称，还取决于前驱体、表面状态、基底耐温、腔体兼容性和后续工艺。Atomic layer deposition provides controlled, conformal films, but feasibility depends on precursors, surface state, thermal budget and chamber compatibility.

01

适合什么需求Good For

Al₂O₃、HfO₂、TiO₂ 等介质或功能薄膜，高深宽比孔槽共形覆盖，器件钝化、阻挡层、种子层和界面调控。Dielectrics, conformal high-aspect-ratio coatings, passivation, barriers and interface control.

02

需要准备什么Prepare First

目标材料与膜厚、基底和已有膜层、样品尺寸与数量、最高允许温度、结构深宽比、表面预处理、后续刻蚀或退火条件。Film, thickness, substrate stack, size, quantity, thermal limit, aspect ratio and downstream steps.

03

常见风险Common Risks

成核延迟、界面污染、孔槽内部覆盖不足、膜应力与针孔、前驱体或腔体交叉污染，以及温度窗口与光刻胶、聚合物不兼容。Nucleation delay, contamination, incomplete coverage, stress, pinholes and thermal incompatibility.

推荐下一步Next Step

先把“要什么膜”转换成可核对的材料栈、温度和覆盖性指标。Turn the film request into a checkable stack, thermal budget and conformality target.

请提交结构截面示意、目标膜厚与容差、关键孔槽尺寸、基底表面状态和验收方式。微纳Hub 会先比较 ALD、PECVD、溅射或蒸发路线，并确认膜厚、折射率、电学性能或截面 SEM 的验收点。Share the cross-section, thickness tolerance, feature geometry, surface state and acceptance method so ALD can be compared with PECVD, sputtering or evaporation.

提交 ALD 沉积需求Submit ALD request查看镀膜工艺导航Open film route