适合什么需求Good For
硅、二氧化硅、氮化硅、二氧化钛及部分化合物半导体的各向异性刻蚀；光子器件、超表面、纳米结构和需要控制侧壁的图形转移。Directional etching of silicon, oxides, nitrides, TiO2 and selected compound semiconductors for photonics and nanostructures.
专业词入口Topic Entry
ICP 刻蚀加工，先把材料体系、掩膜和侧壁指标说清楚。ICP etching starts with the material system, mask and sidewall target.
ICP（感应耦合等离子体）刻蚀可分别调节等离子体密度与基底偏压，常用于要求较高刻蚀速率、方向性或深宽比的图形转移。是否适用仍取决于材料、气体体系、掩膜选择比、热管理和允许的表面损伤，不能只凭设备名称判断。ICP etching offers separate control of plasma density and substrate bias, but feasibility still depends on chemistry, mask selectivity, thermal control and damage limits.
需要准备什么Prepare First
完整材料堆栈与厚度、目标深度、最小开口、图形密度、样品尺寸、掩膜材料与厚度，以及侧壁角、粗糙度和残留要求。Full stack, depth, minimum opening, pattern density, sample size, mask thickness, sidewall angle, roughness and residue limits.
常见风险Common Risks
掩膜选择比不足、侧壁倾斜或粗糙、微加载与深宽比效应、聚合物残留、片间温差、过刻损伤和暴露下层膜。Mask loss, profile error, microloading, aspect-ratio effects, polymer residue, thermal variation and over-etch damage.
推荐下一步Next Step
用截面图和验收指标描述目标，不要只发一个“ICP 刻蚀”词。Describe the target with a cross-section and acceptance criteria.
请提交材料截面、GDS 或关键图形截图、目标刻蚀深度与公差、掩膜方案、样品数量，以及截面 SEM 或轮廓仪测量要求。微纳Hub 会先判断材料工艺窗口、选择比和损伤风险，再匹配合适的刻蚀路线与资源。Share the stack, layout, target depth, tolerance, mask, quantity and SEM or profilometry criteria for route matching.
提交 ICP 刻蚀需求Submit ICP request比较 ICP、RIE 与 DRIECompare ICP, RIE and DRIE查看刻蚀工艺导航Open etch route