适合什么需求Good Fit
接触式光刻、Stepper/DUV 光刻、小批量重复图形、微流控、电极、MEMS、光栅与光子器件等需要固定掩膜图形的项目。Contact, stepper or DUV lithography; repeated small-batch patterns; microfluidics, electrodes, MEMS, gratings and photonic devices.
专业词入口Topic Entry
光掩膜版制作，先把版图、极性和验收说成同一套语言。For photomasks, align layout, polarity and acceptance before fabrication.
光掩膜版或铬版不是把图“打印出来”这么简单。版图层、尺寸单位、明暗极性、最小图形、基板尺寸、套刻标记和后续光刻胶路线共同决定是否可投递、可曝光、可验收。A photomask is more than a printed layout: layers, units, polarity, minimum feature, substrate, marks and resist route determine whether it can be written, exposed and accepted.
需要准备什么Prepare First
优先提供 GDSII/OASIS；同时写明单位、top cell、每层用途、目标掩膜尺寸、最小线宽/间距、极性、遮光区定义、数量、对准 mark、是否多层套刻及计划使用的曝光方式。Provide GDSII/OASIS plus units, top cell, layer intent, mask size, CD/space, polarity, opaque-field definition, count, alignment marks, overlay need and exposure method.
常见风险Common Risks
正负极性理解相反、DXF 线条未闭合、单位或镜像出错、最小间距超出写版能力、边缘无有效图形留白、mark 缺失，以及图形在实际光刻中因胶厚或曝光条件失真。Reversed polarity, open DXF lines, unit or mirroring errors, CD limits, missing edge clearance or marks, and resist/exposure distortion are common failure modes.
验收与下一步Acceptance & Next Step
先确认“掩膜图形正确”，再确认它能在目标光刻流程里转移出来。First verify the mask image, then verify transfer in the intended lithography flow.
报价和验收建议区分文件检查、写版/检版、掩膜实物缺陷、关键尺寸，以及首片曝光验证。请同时提供基底、胶型和后续刻蚀或 Lift-off 信息；微纳Hub 会先帮助核对版图和掩膜路线，再匹配适合的制作与曝光资源。Separate file review, mask writing/inspection, physical defects, critical dimensions and first-exposure validation. Include substrate, resist and downstream etch or lift-off so the mask route can be matched before fabrication.
提交光掩膜版制作需求Submit photomask request 先做 GDS 版图检查Check GDS before mask making 查看接触式光刻需求准备Open contact lithography guide