适合什么需求Good For
薄膜开孔、介质层图形转移、浅硅刻蚀、光刻胶去残留，以及要求比湿法刻蚀更强方向性的微纳结构。Thin-film openings, dielectric pattern transfer, shallow silicon etch, descum and directional microstructures.
专业词入口Topic Entry
RIE 刻蚀，先确认材料、掩膜和目标剖面是否匹配。RIE starts with matching the material, mask and target profile.
RIE（反应离子刻蚀）常用于硅、二氧化硅、氮化硅和聚合物薄层的各向异性图形转移。设备名称不能代替工艺判断：材料堆栈、刻蚀深度、开口尺寸、掩膜余量、选择比和允许的等离子体损伤会共同决定可行性。Reactive ion etching transfers anisotropic patterns into silicon, oxides, nitrides and polymers; the stack and acceptance target determine feasibility.
需要准备什么Prepare First
从基底到顶层的材料与厚度、目标深度、最小开口、图形密度、样品尺寸、掩膜材料与厚度、后续工艺及测量点位。Full stack, target depth, minimum opening, pattern density, sample size, mask, downstream process and measurement map.
常见风险Common Risks
掩膜提前耗尽、选择比不足、侧壁倾斜或粗糙、微加载、刻蚀残留、过刻损伤，以及不同图形密度造成的深度差异。Mask loss, low selectivity, profile error, microloading, residue, over-etch damage and pattern-density bias.
推荐下一步Next Step
先判断普通 RIE 是否够用，再比较 ICP、DRIE 或湿法刻蚀。Decide whether RIE is sufficient before moving to ICP, DRIE or wet etching.
请提交材料截面、GDS 或关键图形截图、目标深度、允许公差和 SEM 验收要求。微纳Hub 会先看功率密度、方向性、选择比和损伤风险是否匹配，避免只按设备缩写询价。Share the stack, layout, depth, tolerance and SEM criteria so directionality, selectivity and damage risk can be assessed.
提交 RIE 刻蚀需求Submit RIE request比较 ICP、RIE 与 DRIECompare ICP, RIE and DRIE查看刻蚀工艺导航Open etch route